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Fig. 14


From top to bottom: changes of the NLTE Stokes profiles I, Q, U, and V of the Si i 10 827 Å line at the wavelength point Δλ = 0.10 Å caused by using different atomic models of Si i. Left: maps of the NLTE changes for the snapshot surface. Maximum and minimum values are shown at the top of each map. Right: scatter plots of the changes. The NLTE Stokes parameters are calculated by using the simplest Si i model with six bb transitions and the complicated model atom with 605 bb transitions (see the bottom left panel of Fig. 4). A horizontal thin line indicate a reference point for zero NLTE effects. For more information, see the caption of Fig. 11.

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