Volume 642, October 2020
|Number of page(s)||6|
|Section||Atomic, molecular, and nuclear data|
|Published online||20 October 2020|
Electron-impact single ionization of Si+
Institute of Theoretical Physics and Astronomy, Vilnius University, Saulėtekio Av. 3, 10257 Vilnius, Lithuania
Accepted: 9 August 2020
Electron-impact single ionization is studied in the Si+ ion by considering transitions among energy levels. The study includes excitation-autoionization (EA) and collisional ionization processes. The excitations are investigated up to shells with the principal quantum numbers n ≤ 10. It is shown that correlation effects included in the EA calculations play a crucial role in explaining measurements. The correlation effects diminish the EA cross sections by ∼30% compared to single-configuration calculations. However, the collisional ionization is not significantly affected by an extension of the basis of interacting configurations. Good agreement between the presented level-to-level distorted wave data and experimental measurements is found for the single ionization of the Si+ ion.
Key words: atomic data / atomic processes
© ESO 2020
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.