| Issue |
A&A
Volume 405, Number 3, July III 2003
|
|
|---|---|---|
| Page(s) | 1157 - 1162 | |
| Section | Atomic, molecular, and nuclear data | |
| DOI | https://doi.org/10.1051/0004-6361:20030752 | |
| Published online | 30 June 2003 | |
Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields
1
Institut für Kernphysik, Universität Gießen, Leihgesterner Weg 217, 35392 Gießen, Germany
2
Stockholm University, SCFAB, Fysikum, 10691 Stockholm, Sweden
3
Manne Siegbahn Laboratory, 10405 Stockholm, Sweden
4
Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, UK
Corresponding author: S. Böhm, Sebastian.G.Boehm@physik.uni-giessen.de
Received:
9
October
2002
Accepted:
13
May
2003
The dielectronic recombination rate coefficient of 
ions has been
measured at the heavy ion storage ring cryring. The electron energy range covered all
dielectronic recombination resonances attached to 
(
) core excitations. The rate coefficient in a
plasma has been derived. It is compared to theoretical data. In addition
the influence of external electric
fields on the dielectronic recombination has been investigated. When increasing the electric field
strength to 340 V/cm the experimental recombination rate coefficient is found to
increase by up to a factor of 2.
Key words: atomic data / atomic processes / line: formation / plasmas / radiation mechanisms: general
© ESO, 2003
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