Volume 405, Number 3, July III 2003
|Page(s)||1157 - 1162|
|Section||Atomic, molecular, and nuclear data|
|Published online||30 June 2003|
Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields
Institut für Kernphysik, Universität Gießen, Leihgesterner Weg 217, 35392 Gießen, Germany
2 Stockholm University, SCFAB, Fysikum, 10691 Stockholm, Sweden
3 Manne Siegbahn Laboratory, 10405 Stockholm, Sweden
4 Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, UK
Corresponding author: S. Böhm, Sebastian.G.Boehm@physik.uni-giessen.de
Accepted: 13 May 2003
The dielectronic recombination rate coefficient of ions has been measured at the heavy ion storage ring cryring. The electron energy range covered all dielectronic recombination resonances attached to () core excitations. The rate coefficient in a plasma has been derived. It is compared to theoretical data. In addition the influence of external electric fields on the dielectronic recombination has been investigated. When increasing the electric field strength to 340 V/cm the experimental recombination rate coefficient is found to increase by up to a factor of 2.
Key words: atomic data / atomic processes / line: formation / plasmas / radiation mechanisms: general
© ESO, 2003
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