Experimental N V and Ne VIII low-temperature dielectronic recombination rate coefficients
1
Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Giessen, Leihgesterner Weg 217, 35392 Giessen, Germany e-mail: Sebastian.G.Boehm@physik.uni-giessen.de
2
Atomic physics, Fysikum, Stockholm University, AlbaNova, 10691 Stockholm, Sweden
3
Manne Siegbahn Laboratory, 10405 Stockholm, Sweden
Received:
7
December
2004
Accepted:
8
March
2005
The dielectronic recombination rate coefficients of 
and 
ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to 
(
) core excitations. The rate coefficients in a plasma were derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients were then compared to theoretical data. In addition the influence of external electric fields with field strengths up to 1300 V/cm on the dielectronic recombination rate coefficient was investigated.
Key words: atomic data / atomic processes / line: formation / plasmas / radiation mechanisms: general
© ESO, 2005