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Table 4.
Values of typical gas pressures for quiescent prominences, electron densities, contribution functions, and geometrical thicknesses of hotter envelope of the prominence at approximate Si IV line formation temperature 80 000 K.
| p (dyn cm−2) | 0.01 | 0.05 | 0.1 |
| ne (109 cm−3) | 0.47 | 2.4 | 4.7 |
| G(ne, T) (10−25 erg cm3 s−1 sr−1) | 8.1 | 4.4 | 4.0 |
| DPCTR (km) | 3300 | 240 | 70 |
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