Table 4
Low ionization Si lines in ObsIDs 8525 (φorb ~ 0.05) and 9847 (φorb ~ 0.2).
| Line | λ lab | ObsID | λ obs | A | Δv | ξ |
| [Å] | [Å] | [10-4 ph s-1cm-2] | [km s-1] | [km s-1] | ||
|
|
||||||
| Si xii (Li) | 6.7200 ± 0.0003 | 8525 | 6.716 ± 0.004 |
|
−162 ± 162 |
|
| 9847 | 6.715 ± 0.003 | −5.9 ± 1.3 | −244 ± 114 |
|
||
| Si xi (Be) | 6.7848 ± 0.0003 | 8525 | line not present | |||
| 9847 | 6.7750 ± 0.0001 |
|
−434 ± 7 |
|
||
| Si x (B) | 6.8565 ± 0.0002 | 8525 | 6.858 ± 0.008 |
|
43 ± 332 |
|
| 9847 | 6.859 ± 0.001 |
|
126 ± 33 | ≤ 2595 | ||
| Si ix (C) | 6.9285 ± 0.0003 | 8525 | 6.9228 ± 0.0001 |
|
248 ± 2 | ≤ 749 |
| 9847 | line not present | |||||
Notes. λlab: laboratory wavelength (Hell et al. 2013), λobs: observed wavelength, A: line flux (negative: absorption), Δv: velocity shift, ξ: thermal broadening parameter.
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