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Fig. 3


Section of the HST/STIS spectrum (thin gray line) comprising silicon lines from three ionization stages. Overplotted are three models (thick lines) with different Teff  (dashed, solid, and dotted, as indicated in the legend). At 180 000 K, the Si vi lines are too strong; the Si viii line is too strong at 220 000 K. Other model parameters: log  g= 6.7, C = 9.3 × 10-3, N = 2.2 × 10-3, Si = 1.3 × 10-3. Also shown is the archival GHRS spectrum near the Si vii 1236 Å line, shifted upward. Observations and models were convolved with 0.02 Å boxcars and 0.036 Å Gaussians, respectively.

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