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Table 1

Values of parameters used in modeling charge transport of SCD.

Parameters Values

Voltage (VT for dd computation) (Gow 2009) 3.8 V
Channel stop pitch (Gow 2009) 25 μm
Channel stop width (Gow 2009) 6 μm
Number of acceptor impurities (Na) (Gow 2009) 4 × 1012 cm-3
Field + field-free zone thick (Gow 2009) 50 μm
Life time (τ) (Tyagi & van Overstraeten 1983) 10-3 s
Temperature (Narendranath 2011) 263 K
Number of mono-energetic photons 5 × 104

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