Values of parameters used in modeling charge transport of SCD.
|Voltage (VT for dd computation) (Gow 2009)||3.8 V|
|Channel stop pitch (Gow 2009)||25 μm|
|Channel stop width (Gow 2009)||6 μm|
|Number of acceptor impurities (Na) (Gow 2009)||4 × 1012 cm-3|
|Field + field-free zone thick (Gow 2009)||50 μm|
|Life time (τ) (Tyagi & van Overstraeten 1983)||10-3 s|
|Temperature (Narendranath 2011)||263 K|
|Number of mono-energetic photons||5 × 104|
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