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Table 1
Values of parameters used in modeling charge transport of SCD.
| Parameters | Values |
|
|
|
| Voltage (VT for dd computation) (Gow 2009) | 3.8 V |
| Channel stop pitch (Gow 2009) | 25 μm |
| Channel stop width (Gow 2009) | 6 μm |
| Number of acceptor impurities (Na) (Gow 2009) | 4 × 1012 cm-3 |
| Field + field-free zone thick (Gow 2009) | 50 μm |
| Life time (τ) (Tyagi & van Overstraeten 1983) | 10-3 s |
| Temperature (Narendranath 2011) | 263 K |
| Number of mono-energetic photons | 5 × 104 |
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