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Fig. 4


Portions of the 3 mm line survey of IRC +10216 showing the J = 9−8 to J = 11−10 rotational lines of SiH3CN. Each J line is composed of a set of K components whose line profiles overlap. The K = 0 and 1 components, being the strongest, are indicated by arrows. The rms noise levels per 1 MHz channel are 0.5, 0.6, and 1.2 mK in the bottom, middle, and top panels, respectively. The J = 10−9 line is blended with a weak unidentified line at the blue side and both the J = 10−9 and J = 11−10 lines are blended at the red side with a weak component of C5N in its ν5 = 1 vibrational state. These blended lines alone cannot explain the whole emission features centered at the frequencies of SiH3CN. Thick gray lines correspond to the calculated line profiles under LTE, assuming that SiH3CN extends between 5 and 20′′ with a homogeneous fractional abundance and rotational temperature of 39 K.

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