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Table 6

SiO temperatures and abundances.

ID T (K)a X(SiO)clumpb X(SiO)HCO+c Ratiod
01 18.7 0.26 × 10-9 0.07 × 10-9 3.80
02 10.0 3.82 × 10-9 20.22 × 10-9 0.19
03 13.0 1.59 × 10-9 12.62 × 10-9 0.13
04 10.0 0.59 × 10-9 2.03 × 10-9 0.29
05 15.1 1.31 × 10-9 2.17 × 10-9 0.60
06 10.0 1.36 × 10-9 0.85 × 10-9 1.60
07 12.7 2.13 × 10-9 2.12 × 10-9 1.01
08 9.6 7.32 × 10-9 29.95 × 10-9 0.24
09 11.0 2.09 × 10-9 7.19 × 10-9 0.29
10 12.9 2.62 × 10-9 9.20 × 10-9 0.29
11 13.0 1.69 × 10-9 5.15 × 10-9 0.33
12 11.7 4.19 × 10-9 10.64 × 10-9 0.39
13 10.0 0.47 × 10-9 0.22 × 10-9 2.08
14 13.6 1.07 × 10-9 1.79 × 10-9 0.60

Notes.

(a)

Temperature used to derive the outflow parameters (see Sect. 4.1), which were computed as the rotational temperature derived from the SiO (2−1) and (5−4) lines, except for those sources with no detection of the SiO (5−4), for which we assumed a value of 10 K.

(b)

SiO abundance derived from the ratio between the number of SiO particles over the clump and the corresponding H2 gas mass, which was obtained from the relation between the outflow mass and the mass of the clump (e.g., Beuther et al. 2002b; López-Sepulcre et al. 2010).

(c)

SiO abundance derived from the ratio of the SiO and HCO+ column densities, and assuming a fixed HCO+ abundance of 5 × 10-9 (Irvine et al. 1987; Tafalla et al. 2010; Busquet et al. 2011; Tafalla & Hacar 2013).

(d)

X(SiO)clump to X(SiO)HCO+ ratio.

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