Volume 631, November 2019
|Number of page(s)||13|
|Section||Atomic, molecular, and nuclear data|
|Published online||15 October 2019|
MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV⋆
Department of Physics, Lund University, Post Office Box 118, 22100 Lund, Sweden
2 Department of Physics, Çanakkale Onsekiz Mart University, Çanakkale, Turkey
3 Materials Science and Applied Mathematics, Malmö University, 20506 Malmö, Sweden
4 Institute of Modern Physics, Fudan University, Shanghai, PR China
Accepted: 4 August 2019
We present extensive multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations including 106 states in doubly ionized silicon (Si III) and 45 states in triply ionized silicon (Si IV), which are important for astrophysical determination of plasma properties in different objects. These calculations represents an important extension and improvement of earlier calculations especially for Si III. The calculations are in good agreement with available experiments for excitation energies, transition properties, and lifetimes. Important deviations from the NIST-database for a selection of perturbed Rydberg series are discussed in detail.
Key words: atomic data
Tables 1 and 2 are only available at the CDS via anonymous ftp to cdsarc.u-strasbg.fr (184.108.40.206) or via http://cdsarc.u-strasbg.fr/viz-bin/cat/J/A+A/631/A29
© ESO 2019
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