Open Access
Table 1
MIRI Si:As IBC detector electrostatic model parameters inputted to Poisson_CCD.
| Parameter | Value (unit) | Description |
|---|---|---|
| V_bb | -4.0 V | Back bias voltage at buried contact (Ressler et al. 2015) |
| V_contact | -1.8 V | Contact voltage at front side contact plus 0.2 V from clock feedthrough |
| ContactCapacitance | 33.6 fF | Nominal capacitance at the integrating node (Rieke et al. 2015) |
| RecombinationLifetime | 2 × 10−7 s | Electron recombination time (Rieke et al. 2015) |
| TopDopingThickness | 1.0 µm | Thickness of buried contact |
| TopSurfaceDoping | 7.5 × 1018 cm−3 | Doping buried contact (Argyriou et al. 2020a) |
| BackgroundDoping | 1.5 × 1012 cm−3 | Density of minority impurity concentration in infrared-active layer |
| BottomOxide | 1.0 µm | Bottom oxide thickness above pixel metallization |
| ContactDose_0 | 7.5 × 1018 cm−3 | Doping of front side contact |
| ContactWidth | 20.0 µm | Width of front side contact |
| ContactHeight | 20.0 µm | Height (not thickness) of front side contact |
| SensorThickness | 35 µm | Infrared-active layer thickness |
| PixelSizeX | 25 µm | Pixel size in x (Rieke et al. 2015) |
| PixelSizeY | 25 µm | Pixel size in y |
| CCDTemperature | 6.4 K | Operational temperature of MIRI detectors |
| Lambda | 5.6 µm | Wavelength of incoming light |
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