Fig. C.1
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Similar to Figs. 8 and 10 but assuming the CLOSE G05 DTD. The yields 〈ySi〉 and 〈mSi,Ia〉 for silicon have been re-scaled by a factor of 95%. The infall and model parameters are: τ1 = 0.5 Gyr, τ2 = 8.75 Gyr, t1 = 0 Gyr, t2 = 2.5 Gyr, A1 ≈ 10.227 M⊙ pc−2Gyr−1, and A2 ≈ 6.004 M⊙ pc−2 Gyr−1 (equivalent to a mass ratio between infalls of 7.5), ω = 0.2 and vL = 1.5 Gyr−1.
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