Fig. 5

image

Thickness, L, and rms thickness variation, σL, for various detectors, as follows: filled circles–prototype detectors made from SOI wafers for PSP EPI-Hiby the LBNL-Caltech collaboration; unfilled circles–detectors made from SOI wafers for PSP EPI-Hiby Micron Semiconductor; crosses–detectors made from conventional wafers for STEREO LET (Mewaldt et al. 2008) by Micron Semiconductor. The light, dotted lines indicate curves of constant σLL with values (top to bottom) of 5, 2, 1, 0.5, 0.2, 0.1, and 0.05%.

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