Two composed electron distributions for T_B = 5 ×10⁶ K, n_B/n_s = 0.10, and ⟨ E_r ⟩ = 1.19 keV and 1.84 keV with marked excitation energy E_d of the satellite line Si xiid 5.82 Å, excitation energy E_x of the allowed line Si xiii 5.68 Å, and the relative number of electrons over distribution that contributed to the excitation rate (crossway hatched areas), the ionization energy E_I of Si xiii to Si xiv and relative number of electrons over distribution that contributed to the ionization rate (horizontally and vertically hatched areas).