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Table 1

Best-fit parameters for the models used to fit the spectrum of EXO 1745–248.

EPIC-pn (2.4–11 keV) Broadband (0.35–180 keV)
Component Parameter Model I Model II Model II* Model III Model IV

tbabs NH(× 1022 cm-2) (2.0) (2.0) 2.02 ± 0.04 2.13 ± 0.05 2.06 ± 0.05
bbody kTth (keV) 0.58 0.64 0.63 ± 0.04 0.73 ± 0.03
bbody Rbb (d5.5 km) 5.5 4.6 ± 0.2 4.5 ± 0.5 3.8 ± 0.2 4.4 ± 0.4
nthComp Γ 2.06 1.93 ± 0.07 1.89 ± 0.08 1.90 ± 0.05
nthComp kTe (keV) (37.0) (37.0) 37.2 33.6
nthComp kTin (keV) 1.33 1.3 ± 0.1 1.27 ± 0.06 1.34 ± 0.07 1.25
nthComp Rw (d5.5 km) 1.6 ± 0.3 1.5 ± 0.3 2.8 ± 0.3 2.4 ± 0.3 2.5 ± 0.4
nthComp F Comp 0.86 ± 0.02 0.96 ± 0.08 0.85 ± 0.08 0.83 ± 0.08
Diskl/rdblur β irr ... − 2.44 ± 0.07 − 2.24 ± 0.07 − 2.43 ± 0.05
Diskl/rdblur Rin (Rg) ... 20 ± 6 < 8.5
Diskl/rdblur Rout (Rg) ... (107) (107) (107) (107)
Diskl/rdblur i (°) ... 37 ± 3 38 ± 1
reflection Ωr/ 2π ... ... ... 0.22 ± 0.04
reflection log ξ ... ... ... 2.70 ± 0.07
reflection Tdisk (K) ... ... ... ... (106)
reflection Norm (× 10-2) ... ... ... ... 0.86 ± 0.55
Gauss/Diskl E1 (keV) 6.75 ± 0.02 6.74 ± 0.02 ... 6.75 ± 0.02
Gauss/Diskl σ1 (keV) ... ... ...
Gauss/Diskl N 1 7.1 ± 0.1 ...
Gauss/Diskl EW1 (eV) 62.0 ± 0.2 68.2 ± 0.4 72.9 ± 2.5 ... 68.6 ± 2.4
Gaussian E2 (keV) 6.50 ± 0.01 6.50 ± 0.02 6.49 ± 0.02 6.49 ± 0.02
Gaussian σ2 (keV) (0.0) (0.0) (0.0) (0.0) (0.0)
Gaussian N 2 2.8 ± 0.3 3.2 ± 0.2 3.2 ± 0.2 2.4 ± 0.2 3.2 ± 0.3
Gaussian EW2 (eV) 26.8 ± 0.2 31.6 ± 0.2 31.3 ± 1.4 23.1 ± 1.9 31.1 ± 1.9
Gaussian E3 (keV) 7.09 ± 0.07 (7.06) (7.06) (7.06)
Gaussian σ3 (keV) (0.0) (0.0) (0.0) (0.0) (0.0)
Gaussian N 3 (N2/ 10) (N2/ 10) (N2/ 10) (N2/ 10) (N2/ 10)
Gaussian EW3 (eV) 3.1 ± 0.1 3.6 ± 0.1 3.5 ± 0.7 2.7 ± 0.8 3.5 ± 0.9
Gauss/Diskl E4 (keV) 2.68 ± 0.03 2.67 ± 0.03 2.67 ± 0.03
Gauss/Diskl σ4 (keV) (0.0) ... ... ... ...
Gauss/Diskl N 4 2.0 ± 0.4 2.3 ± 0.4 1.2 ± 0.4 2.2 ± 0.3
Gauss/Diskl EW4 (eV) 3.8 ± 0.2 7.5 ± 0.4 8.4 ± 1.1 4.2 ± 0.9 8.0 ± 1.3
Gauss/Diskl E5 (keV) 3.30 ± 0.03 3.29 ± 0.02 3.27 ± 0.04 3.28 ± 0.03 3.29 ± 0.03
Gauss/Diskl σ5 (keV) ... ... ... ...
Gauss/Diskl N 5 2.1 ± 0.3 2.1 ± 0.3
Gauss/Diskl EW5 (eV) 11.5 ± 0.1 9.2 ± 0.1 9.5 ± 1.2 7.2 ± 1.1 8.8 ± 1.1
Gauss/Diskl E6 (keV) 3.96 ± 0.02 3.96 ± 0.05 4.01 ± 0.05 3.96 ± 0.05
Gauss/Diskl σ6 (keV) ... ... ... ...
Gauss/Diskl N 6 1.6 ± 0.3 2.21 ± 0.05 1.2 ± 0.4
Gauss/Diskl EW6 (eV) 15.4 ± 0.2 8.5 ± 0.1 8.3 ± 0.9 6.3 ± 1.9 8.1 ± 1.2
Flux 9.34 ± 0.01 9.23 ± 0.03 26 ± 3 28 ± 3 26 ± 3
χ2 (d.o.f.) 1.457 (106) 1.338 (106) 1.152 (1083) 1.173 (1083) 1.1487 (1081)
pnull 1.5 × 10-3 1.1 × 10-2 3.6 × 10-4 6.1 × 10-5 4.6 × 10-4

Notes. Fluxes are unabsorbed and expressed in units of 10-10 erg cm-2 s-1. FnthComp is the flux in the Comptonization component expressed as a fraction of total flux. For the fits of the EPIC-pn spectrum alone (third and fourth columns) the fluxes are evaluated in the 0.5–10 keV energy band, while they are calculated in the 0.5–100 keV range for the broadband spectrum (from the fifth to the seventh columns). The normalization of the lines are expressed in units of 10-4 ph cm-2 s-1. In detail, Model I is given by tbabs * (bbody + Gaussian(E1) + Gaussian(E2) + Gaussian(E3) + Gaussian(E4) + Gaussian(E5) + Gaussian(E6) + nthComp) – Model II: tbabs * (bbody + Diskline(E1) + Gaussian(E2) + Gaussian(E3) + Diskline(E4) + Diskline(E5) + Diskline(E6)+nthComp) – Model II: the same as Model II but applied to the broad band spectrum - Model III: tbabs * (bbody + Diskline(E1) + Gaussian(E2) + Gaussian(E3) + Diskline(E4) + Diskline(E5) + rdblur*rfxconv*nthComp) – Model IV: tbabs * (bbody + Diskline(E1) + Gaussian(E2) + Gaussian(E3) + Diskline(E4) + Diskline(E5) + Diskline(E6) + rdblur*pexriv+nthComp), where tbabs describes the photoelectric absorption, bbody is the blackbody emission, and nthComp describes the primary Comptonization spectrum. The component rdblur describes the smearing effects, while rfxconv and pexriv are different reflection models (see text for details).

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