Table 3
Shock velocities used in this model and corresponding saturation times and maximum temperatures taken from Jiménez-Serra et al. (2008).
| nH,pre(cm-3) | nH,post(cm-3) | vs (km/s) | Tmax (K) | tsat (yr) |
|
|
||||
| 2 × 104 | 6.1 × 104 | 10 | 300 | 95.4 |
| 2 × 104 | 1.0 × 105 | 20 | 900 | 57.0 |
| 2 × 104 | 1.3 × 105 | 30 | 1800 | 44.0 |
| 2 × 104 | 1.6 × 105 | 40 | 2200 | 45.5 |
| 2 × 105 | 6.3 × 105 | 10 | 300 | 10.5 |
| 2 × 105 | 1.0 × 106 | 20 | 800 | 5.7 |
| 2 × 105 | 1.4 × 106 | 30 | 2000 | 4.4 |
| 2 × 105 | 1.7 × 106 | 40 | 4000 | 4.6 |
| 2 × 106 | 6.3 × 106 | 10 | 300 | 1.0 |
| 2 × 106 | 1.0 × 107 | 20 | 800 | 0.6 |
| 2 × 106 | 1.4 × 107 | 30 | 2000 | 0.4 |
| 2 × 106 | 1.7 × 107 | 40 | 4000 | 0.5 |
|
|
||||
Notes. In Jiménez-Serra et al. (2008)tsat is defined as the time when sputtering of dust grains “saturates” the silicon abundance (i.e., when the silicon abundance changes between two consecutive time steps by less than 10%). Symbols npre and npost stand for preshock and postshock densities, respectively.
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