Fig. 5
Shift in peak position of MgSiO3 670 cm-1 medium-range order Raman feature as a function of annealing temperature. Shifts towards higher frequencies are characteristic of a narrowing of the Si-O-Si bond angle and a shortening of the Si-O bond distance. The sharp decrease between 475 and 500 °C is attributed to strain release.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.