This article has an erratum: [https://doi.org/10.1051/0004-6361/201116511e]
Schematic figure showing the low-temperature ( ≤ 250 K) dielectronic recombination of N ii through the fine-structure autoionizing levels between the two lowest ionization thresholds of N iii 2P° 1/2 and 2P° 3/2. The electrons captured to the high-n autoionizing levels decay to low-n bound states through cascades and optical recombination lines (ORLs) are thus emitted. Here Multiplets V3, V19 and V39 are presented as examples.
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