Volume 423, Number 1, August III 2004
|Page(s)||397 - 400|
|Section||Atomic, molecular, and nuclear data|
|Published online||29 July 2004|
Stark broadening of the four times ionized silicon spectral lines*
Groupe de Recherche en Physique Atomique et Astrophysique, Faculté des Sciences de Bizerte, 7021 Zarzouna, Tunisia
2 Astronomical Observatory, Volgina 7, 11160 Belgrade, Serbia e-mail: email@example.com
3 Institute Isaac Newton of Chile, Yugoslavia Branch, Yugoslavia
4 Laboratoire d'étude du Rayonnement et de la Matière en Astrophysique, UMR CNRS 8112, Observatoire de Paris-Meudon, 92195 Meudon, France
Accepted: 3 May 2004
Using a semiclassical perturbation approach, we have obtained Stark broadening parameters for 16 Si V multiplets using atomic data calculated ab initio with the SUPERSTRUCTURE code. In order to complete Stark broadening data for the most important charged perturbers in stellar atmospheres, Stark broadening parameters for proton-, He II-, and Si II-impact line widths and shifts are also presented. Results have been obtained for an electron density of 1017 cm-3 as a function of temperature. Moreover, we have performed the same calculations with oscillator strengths calculated within the Coulomb approximation. The differences, which are within the error bars of the semiclassical perturbation approach () confirm that the Bates & Damgaard approximation may be used to complete the atomic data set needed for the Stark broadening calculations for multicharged ions like Si V, where more reliable oscillator strength values are not available.
Key words: atomic processes / line: profiles / atomic data
© ESO, 2004
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