Volume 396, Number 1, December II 2002
|Page(s)||331 - 336|
|Section||Catalogs and data|
|Published online||22 November 2002|
Stark shifts and transition probabilities in Si III and Si IV spectra
Faculty of Physics, University of Belgrade 11001 Belgrade, PO Box 368, Serbia, Yugoslavia
2 Isaac Newton Institute of Chile, Yugoslavia Branch, Belgrade, Yugoslavia
3 Hungarian Academy of Sciences, Budapest, Hungary
4 Astronomical Observatory, 11160 Belgrade, Volgina 7, Serbia, Yugoslavia
Corresponding author: S. Djeniže, srdjan_bukvic@Softhome.net
Accepted: 10 September 2002
Stark shifts of nine doubly charged (Si III) and six triply charged (Si IV) silicon ion spectral lines have been measured in a linear, low-pressure, pulsed arc operated in O2 and SF6 discharges. Si III Stark shift values have been also calculated using the semiclassical perturbation formalism (SCPF) for electrons, protons and helium ions as perturbers. Transition probabilities of the spontaneous emission (Einstein's A values) of nine Si III transitions have been obtained using the relative line intensity ratio (RLIR) method, not applied before in Si III spectrum, and, also, calculated using the Coulomb approximation method. The measured Si IV shift and some calculated Si III shift values present the first published data in this field.
Key words: lines: profiles / atomic data
© ESO, 2002
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