Accurate multiconfiguration calculations of energy levels, lifetimes, and transition rates for the silicon isoelectronic sequence - Ti IX – Ge XIX, Sr XXV, Zr XXVII, Mo XXIX
P. Jönsson, L. Radžiūtė, G. Gaigalas, M. R. Godefroid, J. P. Marques, T. Brage, C. Froese Fischer and I. P. Grant
