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Fig. 11.

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Absorption spectra at t/tcc = 1.7 of ions tracing the intermediate-temperature gas, generated with light rays passing through the centre (in blue), 5 pc from the centre along the x- (dashed orange line) and z-axis (solid orange line), and 15 pc from the centre along the x- (dashed green line) and z-axis (solid green line). In this figure, we display in the upper left panel the absorption profiles of the C IV in the simulation R32-AL, in the upper right panel the C IV in R32-TR, while the lower panels show the lines of the Si IV in the simulation R32-AL (left) and R32-TR (right). We note that a transverse magnetic field favours the production of broader and deeper lines of C IV and Si IV, compared to R32-AL. Fig. C.2 shows the same overall effects at an earlier time (t/tcc = 1.2), so intermediate ions are suitable candidates for tracing the effects of the underlying magnetic field morphology.

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