Free Access
Table 15.
SIS detector specifications and performance.
| SSD | |
| Type | Silicon ion implant |
| Supplier | Micron Semiconductor Ltd |
| Active area | 15.2 cm2 (44.0 mm dia) |
| Thickness | 700 ± 50 μm |
| Mounting substrate | Alumina |
| Active surface metallization | 0 |
| Junction dead layer | 0.05 μm |
| Capacitance | ∼225 pF |
| Depletion voltage | ∼100V (Not to exceed 200V) |
| Leakage current | 3 mA max at +55C |
| 60 nA typical at +20C | |
| Alpha width FWHM | 35 keV |
| MCP | |
| Type | Chevron |
| Supplier | PHOTONICS USA, Inc. |
| Outside (Active) Diameter | 50.04 (40.00) mm |
| Thickness | 1.50 ± 0.03 mm |
| Electrode material | Nichrome (80/20) |
| Pore size | 25 μm |
| Bias Angle | 12 ± 1° |
| Gain | 1 × 107 minimum |
| Bias Current Range | 5–20 μA |
| Resistance | 120–480 MΩ |
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.