Prior to annealing, the raw unprocessed silicate was scanned at room temperature using a
wide-angle scan, 5-70
(Fig. 2). The background profile of this scan was used
to help determine the 15-60
range of the annealing scans. Once the furnace
temperature had stabilised at 1000 K it was then held constant (to within
1 K) and the
sample repeatedly scanned for 19.5 hours. During this time the diffraction data showed the
evolution of a crystalline phase represented by the formation of small sharp Bragg reflections
(Fig. 3) and by the end of this period a more developed crystalline diffraction pattern was clearly visible in the data, superposed upon an amorphous background that had changed little
throughout the annealing period. The crystalline component had begun to form during the first
scan period and by the end of the third had developed to its full extent with both crystalline
and amorphous components changing little from then on. A note of caution is in order though
regarding the interpretation of the development sequence shown in Fig. 3. In these diffraction
scans, the XRD data is collected in angle dispersive mode, thus the
axis is also a
time axis within the scan (each data point being separated by the detector integration time and
the unquantified time it takes the detector arm to move to, and settle at, the next point).
Casual inspection of the bottom scan in Fig. 3 might suggest that high-angle structure develops
before low angle structure, however this is not necessarily the case as the time difference
between low and high angles means that the annealing time of the sample has increased by the
time the detector reaches the high angle end of the scan. However, examination of normalised
peak to continuum ratios for selected Bragg reflections supports the observation of crystallite
development reaching a maximum after about the third scan: after
5 hours, the normalised
peak intensities appear constant to within the signal to noise range of the individual
diffraction patterns.
Reference data from the International Committee for Powder Diffraction Standards (ICPDS) database allowed the crystalline phase to be identified as forsterite (Mg2SiO4). At this annealing temperature no Bragg reflections were unaccounted for. It is worth noting that the open olivine Mg2SiO4 forsterite structure would seem to be compositionally unfavourable for a sample of MgSiO3. Although crystalline MgSiO3 (e.g. enstatite) can be expected to yield some diffraction peaks coincident, or close to, those of forsterite, the latter accounts for all the crystalline reflections in our data. Additionally, by comparison to enstatite reference patterns, those few reflections that did occur at enstatite positions did not correspond to any of the strongest reflections expected for the enstatite structure, strongly supporting the forsterite identification.
The asymmetric shape of the broad feature at
in the raw unprocessed
sample before annealing is characteristic of the presence of disordered layer-type units. If the
layers were, for example, to be stacked parallel to the crystallographic 001 lattice direction,
then normal crystalline reflections of the type 00l would be observed due to the regularity of
stacking. However if the lateral displacements of the layers are totally irregular it is
impossible to define lattice planes with more general Miller indices such as hk0 or hkl. So,
apart from the 00l peaks the only other observable diffraction effects would be those
originating from any 2-dimensional in-plane regularity within each separate plane. Such repeating
2-dimensional structures however would not be confined to specific Bragg angles and instead of
sharp diffraction features they appear as diffuse asymmetric bands which cut off sharply on the
low angle side and die away gradually on the high angle side (Whittaker 1981). These diffuse
bands are characterised by two indices hk, and the low angle cut off is located close to the
position that would otherwise be occupied by the hk0 reflection for the corresponding
3-dimensionally ordered structure. The powder pattern of a material comprising equally spaced
parallel layers, subject to random lateral displacement, consists therefore of a single set of
sharp 00l peaks and a set of broad asymmetric hk bands. The powder pattern shown in Fig. 2.
recorded for our amorphous MgSiO3 sample contains no sharp peaks at all, but
the feature at
is asymmetric and exhibits a sharp low angle rise with a gradual
high angle decay. The 2
rise begins at
and gives an interlayer
d-space of 2.7 Å, which matches the forsterite 130 layer reflection d-spacing. The
complete absence of any normal crystalline 00l-like reflections is evidence that while
layer-forming forsterite components are present in our amorphous sample, initially they are not
stacked parallel to each other. The feature at 60
by the same argument can be
associated with the forsterite 170 inter-layer stacking distance of
1.35 Å, which is half
the 130 d-spacing. The morphology of the diffraction pattern for the raw sample thus shows the
existence of disordered proto-forsteritic units, while the presence of the other diffraction
features not associated with forsteritic layering shows the co-existence of other structural
units in the pre-annealed silicate. Unfortunately, simple inspection of the diffraction pattern
does not allow us to make any quantitative statement regarding the relative proportions of
forsteritic and non-forsteritic structures. The appearance of the pattern itself is governed by
two factors. Firstly, the exponential-like decay in intensity from low to high angle is the
result of scattering interference from the internal structure of the repeating molecular units,
while secondly, the broad superposed features are caused by scattering interference due to the
arrangement of the repeating molecular units with respect of each other (it should also be noted
that it is a well known effect in amorphous diffraction that the width and intensity of features
increase and decrease, respectively, as a function of increasing angle). In silicates, the
dominant contribution to the measured intensity comes from the SiOn tetrahedra. Thus the
precise form of the intra-molecular "decay'' curve will depend on the number of O atoms in the
SiOn units and will be some weighted sum of contributions from SiO, SiO2, SiO3 and
SiO4 as all such units may be expected to exist in the amorphous material. The
inter-molecular diffraction features are determined by the radial distribution of the SiOn
and apart from the forsteritic layer features described above the origin of the other features
can only be determined from detailed modelling, which must take into account the fact that the
measured pattern represents an average of contributions from all SiOn species and
arrangements thereof. Initial modelling results indicate that apart from the proto-forsteritic
layer features discussed above, none of the other features can be ascribed to specific
arrangements of a given SiOn, as each value of n tends to produce features located at
similar positions to the ones in our data. However, a more detailed discussion of this will be
addressed in a later publication.
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(3) |
The net effect, however, of a process such as (3) in the annealed MgSiO3 silicate would be
to increase the overall polymerisation of the amorphous network by reconnecting inter-tetrahedral
Si-O-Si bridging bonds and thus raise the average number of bridging oxygen atoms per tetrahedral
unit (i.e. decrease the non-bridging oxygen number per tetrahedron, NBO/T). Since the amorphous
silicate will initially have a distribution of NBO/T values, annealing will at first promote
the ordering of NBO/T=4 species only and crystal growth stalls when the need for more NBO/T=4
units can only be met by breaking bonds for units with
.
Annealing induced
polymerisation would have meanwhile reduced the bulk NBO/T for these species down towards that
of SiO2 (i.e.
). The mixed amorphous/crystalline state would thus
persist until enough energy has been input to the system to allow the increased number of
multiple bridging bonds to be broken, whereupon the amorphous phase breaks down and further
crystal growth becomes possible.
Initially, for parity with the XRD measurements, IR data were collected for the raw sample and
an annealing temperature of 1000 K for short and long exposure times (2 and 20 hours
respectively). However the results for the annealed sample showed the formation of considerable
fine structure in both the 10 m and 20
m regions for both annealing times. The lack of
temporal discrimination in spectral development at this temperature relative to the XRD data is
likely due to differences in the annealing profile of the IR method, where annealing must be done
off-line, compared to that of the on-line furnace used for the diffraction measurements. Thus in
order to separate out the effects of the annealing time from those of the annealing temperature
we performed a series of measurements at several lower temperatures leading up to 1000 K. With
the exception of the 1000 K data and one intermediate temperature, data were collected for
annealing times of 4 and 24 hours. The results of these measurements are shown in Fig. 4.
The normalization of the measured spectra was done without taking into account the actual mass
of the samples examined as such a procedure would have been unreliable for two reasons: firstly,
the exact determination of the mass of the sample dispersed into the KBr was rather difficult
due to the limited amount of raw material available; secondly, there were certain associated
difficulties in evaluating the precise effect of the substantial mass reduction that occurred
during the annealing process. In order to compare the spectra in a meaningful way, we set to zero
the lowest point of each absorption spectrum in the range 8-24 m, by subtracting from each
an appropriate value. We then set to 1 the highest value in the same range, by multiplying each
spectrum by the appropriate scaling factor. The range 8-24
m was selected as being the more
significant for the purpose of the present paper since it is the range where silicates, in
addition to their main features, also exhibit an absorption minimum. Even if normalising all the
spectra to the interval 0 to 1 by this somewhat arbitary method means we can not make a
quantitative comparison between the different spectral features, it does at least allow for an
easy comparison to be made of the various spectral modifications induced by the annealing
process.
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Figure 4: Normalised IR absorption spectra for MgSiO3 annealed over the temperature range 873 K to 1000 K for short and long annealing times. |
The evolution of fine structure is clearly visible in both regions over the entire time/temperature range (see Fig. 4). The development of features in each of the bands occurs as follows (see also Figs. 5 and 6).
Although this paper is primarily concerned with the evolution of the 10 m and 20
m bands, we note that several features in the region of 15
m also evolve as a function
of annealing (Figs. 4 and 7). Comparison to the behaviour of the features at 10
m and 20
m
suggests the 15
m band features are related to, or follow, the 10
m band features.
Like the 10
m band their development also appears to depend largely on annealing
temperature.
Copyright ESO 2002