EDP Sciences
Free access
Volume 396, Number 1, December II 2002
Page(s) 331 - 336
Section Atomic and molecular data
DOI http://dx.doi.org/10.1051/0004-6361:20021390

A&A 396, 331-336 (2002)
DOI: 10.1051/0004-6361:20021390

Stark shifts and transition probabilities in Si III and Si IV spectra

S. Djenize1, 2, 3, M. S. Dimitrijevic2, 4, A. Sreckovic1, 2 and S. Bukvic1, 2

1  Faculty of Physics, University of Belgrade 11001 Belgrade, PO Box 368, Serbia, Yugoslavia
2  Isaac Newton Institute of Chile, Yugoslavia Branch, Belgrade, Yugoslavia
3  Hungarian Academy of Sciences, Budapest, Hungary
4  Astronomical Observatory, 11160 Belgrade, Volgina 7, Serbia, Yugoslavia

(Received 24 May 2002 / Accepted 10 September 2002 )

Stark shifts of nine doubly charged (Si III) and six triply charged (Si IV) silicon ion spectral lines have been measured in a linear, low-pressure, pulsed arc operated in O 2 and SF 6 discharges. Si III Stark shift values have been also calculated using the semiclassical perturbation formalism (SCPF) for electrons, protons and helium ions as perturbers. Transition probabilities of the spontaneous emission (Einstein's A values) of nine Si III transitions have been obtained using the relative line intensity ratio (RLIR) method, not applied before in Si III spectrum, and, also, calculated using the Coulomb approximation method. The measured Si IV shift and some calculated Si III shift values present the first published data in this field.

Key words: lines: profiles -- atomic data

Offprint request: S. Djenize, srdjan_bukvic@Softhome.net

SIMBAD Objects

© ESO 2002