**Table 1:** Results of the excitation temperatures of Si II, corresponding total number of Si II (= $n_{\rm e}$ ), and abundance ratios of N/O, H/O under the hot component condition.
$T_{\rm ex}$ of Si II[K]	Si II(= $n_{\rm e}$ ) [ ${\rm cm}^{-3}$ ]	N / O	H / O
10 000^a	$1.0\pm0.3 \times 10^{18}$	$\rm 18.7^{+36.9}_{-18.7}$	$\rm0.59^{+0.75}_{-0.59}$
$\mid$
14 000	$3.7\pm0.9 \times 10^{16}$	$\rm 18.8^{+36.8}_{-18.8}$	$\rm0.59^{+0.74}_{-0.59}$
15 000	$2.1\pm0.5 \times 10^{16}$	$\rm 18.8^{+36.6}_{-18.8}$	$\rm0.59^{+0.74}_{-0.59}$
16 000	$1.3\pm0.3 \times 10^{16}$	$\rm 18.9^{+36.5}_{-18.9}$	$\rm0.59^{+0.74}_{-0.59}$
17 000	$8.7\pm2.1 \times 10^{15}$	$\rm 18.9^{+36.3}_{-18.9}$	$\rm0.60^{+0.73}_{-0.60}$
18 000	$6.0\pm1.5 \times 10^{15}$	$\rm 19.0^{+36.0}_{-19.0}$	$\rm0.60^{+0.73}_{-0.60}$
$\mid$
20 000	$3.3\pm0.8 \times 10^{15}$	$\rm 19.2^{+35.5}_{-19.2}$	$\rm0.60^{+0.72}_{-0.60}$

^a Borovicka (1994).

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