Volume 437, Number 3, July III 2005
|Page(s)||1151 - 1157|
|Section||Atomic, molecular, and nuclear data|
|Published online||30 June 2005|
Experimental N V and Ne VIII low-temperature dielectronic recombination rate coefficients
Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Giessen, Leihgesterner Weg 217, 35392 Giessen, Germany e-mail: Sebastian.G.Boehm@physik.uni-giessen.de
2 Atomic physics, Fysikum, Stockholm University, AlbaNova, 10691 Stockholm, Sweden
3 Manne Siegbahn Laboratory, 10405 Stockholm, Sweden
Accepted: 8 March 2005
The dielectronic recombination rate coefficients of and ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to () core excitations. The rate coefficients in a plasma were derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients were then compared to theoretical data. In addition the influence of external electric fields with field strengths up to 1300 V/cm on the dielectronic recombination rate coefficient was investigated.
Key words: atomic data / atomic processes / line: formation / plasmas / radiation mechanisms: general
© ESO, 2005
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