A&A 437, 1151-1157 (2005)
DOI: 10.1051/0004-6361:20042500
Experimental N V and Ne VIII low-temperature dielectronic recombination rate coefficients
S. Böhm1, A. Müller1, S. Schippers1, W. Shi1, M. Fogle2, P. Glans2, R. Schuch2 and H. Danared31 Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Giessen, Leihgesterner Weg 217, 35392 Giessen, Germany
e-mail: Sebastian.G.Boehm@physik.uni-giessen.de
2 Atomic physics, Fysikum, Stockholm University, AlbaNova, 10691 Stockholm, Sweden
3 Manne Siegbahn Laboratory, 10405 Stockholm, Sweden
(Received 7 December 2004 / Accepted 8 March 2005)
Abstract
The dielectronic recombination rate coefficients of
and
ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to
(
) core excitations. The rate coefficients in a plasma were derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients were then compared to theoretical data. In addition the influence of external electric fields with field strengths up to 1300 V/cm on the dielectronic recombination rate coefficient was investigated.
Key words: atomic data -- atomic processes -- line: formation -- plasmas -- radiation mechanisms: general
© ESO 2005

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