EDP Sciences
Free access
Volume 437, Number 3, July III 2005
Page(s) 1151 - 1157
Section Atomic, molecular and nuclear data
DOI http://dx.doi.org/10.1051/0004-6361:20042500

A&A 437, 1151-1157 (2005)
DOI: 10.1051/0004-6361:20042500

Experimental N V and Ne VIII low-temperature dielectronic recombination rate coefficients

S. Böhm1, A. Müller1, S. Schippers1, W. Shi1, M. Fogle2, P. Glans2, R. Schuch2 and H. Danared3

1  Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Giessen, Leihgesterner Weg 217, 35392 Giessen, Germany
    e-mail: Sebastian.G.Boehm@physik.uni-giessen.de
2  Atomic physics, Fysikum, Stockholm University, AlbaNova, 10691 Stockholm, Sweden
3  Manne Siegbahn Laboratory, 10405 Stockholm, Sweden

(Received 7 December 2004 / Accepted 8 March 2005)

The dielectronic recombination rate coefficients of  $\ion{N}{v}$ and $\ion{Ne}{viii}$ ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to $2{\rm s} \rightarrow 2{\rm p}$ ( $\Delta n=0$) core excitations. The rate coefficients in a plasma were derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients were then compared to theoretical data. In addition the influence of external electric fields with field strengths up to 1300 V/cm on the dielectronic recombination rate coefficient was investigated.

Key words: atomic data -- atomic processes -- line: formation -- plasmas -- radiation mechanisms: general

© ESO 2005